Gael Giusti



Research interest: 

Polycrystalline tin-doped indium oxide (ITO) thin films are prepared by Pulsed Laser Deposition (PLD) with an ITO (In2O3-10 wt.% SnO2}) target and deposited on borosilicate glass substrates. By changing independently the deposition temperature and the oxygen pressure, a variety of microstructures are deposited.

These different microstructures are mainly investigated by Transmission Electron Microscopy (TEM) with cross section and plan view electron micrographs, but also by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and X-Ray diffraction. Composition changes in ITO thin films grown under different deposition conditions are characterized by Energy Dispersive X-Ray Spectroscopy (EDX) and Electron Energy Loss Spectroscopy (EELS). The physical properties (optical and electrical)  are also studied.

The main goals of this study are:

– Controlling the defect structure of ITO thin films

– Establishing a correlation between the physical properties and the layer characteristics for the production of high quality ITO layers for both laboratory and industrial applications



I obtained a Science related secondary school diploma in Grenoble (France). I was then accepted for a two years University level preparation for the competitive entrance examinations to French engineering schools (Mathematics, Physics, Chemistry) in Grenoble (France). After 3 years of engineering studies (Material Science-Semiconductor option) at the ENISICAEN in Caen (France), I obtained a Master degree in Material Science in my third year.  I am currently working towards my doctoral degree at the University of Birmingham (School of Metallurgy and Materials Science).”


Deposition and characterisation of functional ITO thin films

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